Fred
H. Pollak
Deputy Director
Institute for Ultrafast Spectroscopy and Lasers
Distinguished Professor
Brooklyn College of CUNY
2900 Bedford Avenue
Brooklyn, N.Y. 11210
Phone: (718) 951-5356; Fax: (718) 951-4871
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Education |
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| University of Chicago |
Ph.D. Physics |
1964 |
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Professional Experience |
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| Director and Fellow |
Society of Photo-Optical Instrumentation Engineers |
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| Fellow |
American Physical Society |
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Research Interests
My research interests include the optical properties of solids, modulation
spectroscopy including studies of semiconductors, semiconductor microstructures,
semiconductor surfaces/ interfaces and semiconductor devices. In the field of
semiconductors, research is being carried out in In-situ monitoring of
semiconductor growth/processing. the growth and characterization of diamondlike
nanocomposite thin films, Raman scattering and the effects of
uniaxial stress on the optical and transport properties of semiconductors and
semiconductor microstructures.
Selected Publications:
- Surface
photovoltage spectroscopy characterization of a GaA1As/InGaAs/GaAs pseudemorphic
high electron mobility structure, Cheng, Y.T., Huang, Y.S., Lin, D.Y.,
Tiong, K.K., Pollak, F.H., and Evans, K.R., Appl. Phys. Lett. 79, 949 (2001).
- Temperature-
dependent contactless electroreflectance and photoluminescence study of GaA1As/InGaAs/GaAs
pseudomorphic high electron mobility transistor structures, Lin, D.Y., Huang, Y.S., Shou, T.S.,
Tiong, K.K., and Pollak, F.H., Appl. Phys. 90, 6421 (2001).
- High Spatial
resolution thermal conductivity of bulk ZnO (0001), Florescu, D.I., Mourokh, L.G., Pollak,
F.H., Look, D.C., Cantwell, G., and Li, X., J. Appl. Phys 890 (2002).
- Surface
photovoltage spectroscopy and normal-incidence reflectivity characterixation
of a 1.3 fm InGaA1As/InP vertical-cavity surface-emitting laser structure, Huang, Y.S., Malikova, L., Pollak,
F.H., Debray, J.P., Ting, S., and Ferguson, I., Mat. Res. Soc. Proc. 680E,
E4.2 (2001).
- MiRman investigation
of the n-dopant distribution in later1 epitaxial overgrown GaN/sapphire (0001),
Chaldyshev, V.V., Pollak, F.H., Pophristic, M., Gou, S.P., and Ferguson, I.,
J. Electron. Mat. 31, 631 (2002).
- Modulated
electric fields produce semiconductor spectra, Pollak, F.H., Laser F World, July
2000, p. S9.
- Thermal
conductivity measurement GaN and A1N, Florescu, D.I., Asnin, V.M., and Pollak, F.H.,
Compound Semiconductor 7, 62 (March 2001).
- Study of
semiconductor surfaces and interfaces using electromodulation, Pollak, F.H., Surf. Interface Anal.
31, 938-953 (2001).